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MITSUBISHI TRANSISTOR MODULES
QM75HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75HA-H
* * * * *
IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5 43.3 8 8 C
B
5.3
E
B
9
9
C 5.3 8 M4 3.5 33 3.5 R6 E
4.5
24
LABEL
22
7
36.5
14
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M5
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.85 -- 2.5 12 3.0 0.35 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) 180 IB=2.0A IB=1.5A DC CURRENT GAIN hFE 160 140 120 100 80 60 40 20 0 0 1 2 3 Tj=25C 4 5 VCE (V) IB=1.0A IB=0.5A 2 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
VCE=2.0V
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
VCE=2.0V Tj=25C 2.6 VBE (V) 3.0
SATURATION VOLTAGE
10 0 7 5 VCE(sat) 4 3 IB=1A 2 Tj=25C Tj=125C -1 10 10 1 2 3 4 5 7 10 2
2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ts 10 1 7 5 4 3 2 VCC=300V IB1=-IB2=1.5A Tj=25C Tj=125C tf
4 IC=100A 3
2
IC=30A IC=75A Tj=25C Tj=125C IC=50A
SWITCHING TIME
1
0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A)
10 0 7 5 4 3 2 10 0
ton 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A)
COLLECTOR CURRENT
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
2 VCC=300V IB1=1.5A IC=75A
REVERSE BIAS SAFE OPERATING AREA
160
COLLECTOR CURRENT IC (A)
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1
ts, tf (s)
140 IB2=-2A 120 100 80 60 40 20 Tj=125C 0 0 100 200 300 400 500 600 700 800 -5A
ts
tf
Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 90 100s tw=50s
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
D
10
C
m
s
5 1m 00 s s
10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.5
0.4
Zth (j-c) (C/ W)
0.3
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.2
0.1 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=1.5A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1
Irr
10 0
trr
10 -1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0
1.6 Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999
trr (s)
Qrr

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